FDN361AN N-Channel MOSFET

Fairchild Semiconductor

Description

FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General .
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on.

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Datasheet Specifications

Part number: FDN361AN
Manufacturer: Fairchild Semiconductor
File Size: 946.07 KB
Datasheet: FDN361AN_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 1.8 A, 30 V. RDS(on) = 0.100 Ω
* @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V. Low gate charge ( 2.1nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power version of industry standard SOT-23 package. Identica

Applications

* DC/DC converter
* Load switch
* Motor drives
* D D S SuperSOT -3 TM G TA=25 C unless otherwise noted o G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Parameter Gate-Source Voltage - Continuous Drain Current - Continuous - P

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FDN361AN N-Channel MOSFET Fairchild Semiconductor

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