FDN361BN

The FDN361BN is N-Channel MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDN361BN
Manufacturer	Fairchild Semiconductor
File Size	153.84 KB
Description	N-Channel MOSFET
Datasheet	FDN361BN_FairchildSemiconductor.pdf
Additional preview pages of the FDN361BN datasheet.

Product details

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

x 1.4 A, 30 V. RDS(ON) = 110 m: @ VGS = 10 V RDS(ON) = 160 m: @ VGS = 4.5 V x Low gate charge x Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities x High performance trench technology for extremely low RDS(ON) D D S SuperSOT TM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.

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Other Datasheets by Fairchild Semiconductor

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Published: May 3, 2007 |