FDN360P - P-Channel MOSFET

ON Semiconductor

FDN360P Datasheet Preview — Preview of FDN360P PDF

Datasheet Details

Part number	FDN360P
Manufacturer	ON Semiconductor ↗
File Size	281.29 KB
Description	P-Channel MOSFET
Datasheet	FDN360P-ONSemiconductor.pdf

FDN360P Product details

Description

This P Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. line power loss and fast switching are required.

Features

2 A,.
30 V.
RDS(ON) = 80 mW @ VGS =.
10 V.
RDS(ON) = 125 mW @ VGS =.
4.5 V.
Low Gate Charge (6.2 nC Typical).
High Performance Trench Technology for Extremely Low RDS(ON).
High Power Version of Industry Standard SOT.
23 Package. Identical Pin.
Out to SOT.
23 with 30% Higher Power Handling Capability.
These Devices are Pb.
Free and are RoHS Compliant SOT.
23 CASE 52.

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Published: Aug 27, 2023 |