FDN360P Datasheet, Mosfet, ON Semiconductor

FDN360P Features

• Mosfet
• 2 A,
• 30 V
• RDS(ON) = 80 mW @ VGS =
• 10 V
• RDS(ON) = 125 mW @ VGS =
• 4.5 V
• Low Gate Charge (6.2 nC Typical)
<

PDF File Details

Part number:

FDN360P

Manufacturer:

ON Semiconductor ↗

File Size:

281.29kb

Download:

📄 Datasheet

Description:

P-channel mosfet. This P

Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored t

FDN360P Application

• Applications where low in
• line power loss and fast switching are required. Features
• 2 A,
• 30 V
• RDS(ON)

TAGS

FDN360P

ON Semiconductor

📁 Related Datasheet

FDN360P - single P-Channel MOSFET (Fairchild Semiconductor)
FDN360P February 1999 FDN360P Single P-Channel PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchil.

FDN361AN - N-Channel MOSFET (Fairchild Semiconductor)
FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild.

FDN361BN - N-Channel MOSFET (Fairchild Semiconductor)
FDN361BN 30V N-Channel, Logic Level, PowerTrench“ MOSFET Fe bruary 2009 FDN361BN 30V N-Channel, Logic Level, PowerTrench“ MOSFET General Descriptio.

FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat.

FDN302P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of ons.

FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s.

FDN304P - P-Channel MOSFET (Kexin)
SMD Type P-Channel MOSFET FDN304P (KDN304P) MOSFET ■ Features ● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) ＜ 52mΩ (VGS =-4.5V) ● RDS(ON) ＜ 70.

FDN304P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel 1.8 V Specified POWERTRENCH) FDN304P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage P.

FDN304PZ - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low volta.

FDN304PZ - P-Channel MOSFET (Fairchild Semiconductor)
FDN304PZ March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s .