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2SB507 - PNP Epitaxial Silicon Transistor

Features

  • Low Frequency Power Amplifier.
  • Complements the 2SD313. Pb Lead-free Production specification 2SB507 TO-220AB.

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PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifier.  Complements the 2SD313. Pb Lead-free Production specification 2SB507 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature -60 V -7 V -3 A 30 W -50 to +150 ℃ X017 Rev.A www.gmesemi.com 1 Production specification PNP Epitaxial Silicon Transistor 2SB507 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
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