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2SB861 - PNP Epitaxial Silicon Transistor

Features

  • Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138. Lead-free Production specification 2SB861 TO-220AB.

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PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138. Lead-free Production specification 2SB861 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -200 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Peak Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -150 V -6 V -2 A -5 1.8 W 30 -45 to +150 ℃ X032 Rev.A www.gmesemi.com 1 Production specification PNP Epitaxial Silicon Transistor 2SB861 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
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