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2SB1260 - PNP Transistor

Features

  • High breakdown voltage and high current. BVCEO=-80V,IC=-1A.
  • Good hFEVLinearity.
  • Low VCE(sat).
  • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 U.

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Datasheet preview – 2SB1260

Datasheet Details

Part number 2SB1260
Manufacturer HOTTECH
File Size 167.00 KB
Description PNP Transistor
Datasheet download datasheet 2SB1260 Datasheet
Additional preview pages of the 2SB1260 datasheet.

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Full PDF Text Transcription

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Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 Unit V V V A mW 1. BASE 2. COLLECTO 3.
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