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4AK27 Datasheet - Hitachi Semiconductor

Silicon N Channel MOS FET High Speed Power Switching

4AK27 Features

* Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A

* 4V gate drive devices.

* High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Absolute Maximum Ratings (Ta =

4AK27 Datasheet (53.04 KB)

Preview of 4AK27 PDF

Datasheet Details

Part number:

4AK27

Manufacturer:

Hitachi Semiconductor

File Size:

53.04 KB

Description:

Silicon n channel mos fet high speed power switching.

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4AK27 Silicon Channel MOS FET High Speed Power Switching Hitachi Semiconductor

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