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INCHANGE

2SB1186 Datasheet Preview

2SB1186 Datasheet

PNP Transistor

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB1186
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Good Linearity of hFE
·Complement to Type 2SD1763
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-3
A
2
W
20
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SB1186 Datasheet Preview

2SB1186 Datasheet

PNP Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB1186
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
-120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
-120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
-2.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
-1.5 V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
-1 μA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
-1 μA
hFE
DC Current Gain
IC= -0.1A; VCE= -5V
100
320
COB
Output Capacitance
IE= 0; VCB= -10V; ftest=1MHz
30
pF
fT
Current-Gain—Bandwidth Product
IE= 0.1A; VCE= -5V; ftest= 30MHz
50
MHz
hFE Classifications
E
F
100-200 160-320
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SB1186
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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