IXZH10N50LA Datasheet, MOSFET, IXYS

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IXZH10N50LA Features and benefits

nA
* IXYS RF Low Capacitance Z-MOSTM Process µA
* Very low insertion inductance (<2nH) mA
* No beryllium oxide (BeO) or other hazardous materials Ω Adv.

IXZH10N50LA Description

RF Power MOSFET

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TAGS

IXZH10N50LA

Power

MOSFET

IXYS

Manufacturer

IXYS

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