IXZH10N50LB Datasheet, MOSFET, IXYS

Download (Size : 255.92KB)

IXZH10N50LB Features and benefits

nA
* IXYS RF Low Capacitance Z-MOSTM Process µA
* Very low insertion inductance (<2nH) mA
* No beryllium oxide (BeO) or other hazardous materials Ω Adv.

IXZH10N50LB Description

RF Power MOSFET

Image gallery

<?=IXZH10N50LB?> Page 2 <?=?> Page 3

TAGS

IXZH10N50LB

Power

MOSFET

IXYS

Manufacturer

IXYS

Related datasheet