* International standard package
* miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectif
IXFN32N120 Datasheet (589.83 KB)
IXFN32N120
IXYS Corporation
589.83 KB
Hiperfet power mosfets.
Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = .
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