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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN38N100P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1000V 38A 210mΩ 300ns
miniBLOC, SOT-227 B E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 38 120 19 2 20 1000 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g
z
G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
IXFN38N100P Datasheet
