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IXFP4N100P - Power MOSFET

Features

  • z z z z z G S D (Tab) TO-220AB (IXFP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds Mounting Force (TO-263) Mounting Torque (TO-220) TO-263 TO-220 300 260 10.65 / 2.2..14.6 1.13 / 10 2.5 3.0 International Standard Packages Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VG.

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Datasheet Details

Part number IXFP4N100P
Manufacturer IXYS
File Size 170.60 KB
Description Power MOSFET
Datasheet download datasheet IXFP4N100P Datasheet
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PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA4N100P IXFP4N100P VDSS ID25 RDS(on) = 1000V = 4A ≤ 3.3Ω TO-263 AA (IXFA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold FC Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 4 8 4 200 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. Nm/lb.in. g g Features z z z z z G S D (Tab) TO-220AB (IXFP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in.
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