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Advance Technical Information
PolarTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFP4N100PM
VDSS ID25
RDS(on)
= 1000V = 2.5A ≤ 3.3Ω
OVERMOLDED Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
Maximum Ratings 1000 1000 ± 20 ± 30 2.5 8.0 4.0 200 10 57 - 55 ... +150 150 - 55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g Advantages
z z z
G
DS D = Drain
G = Gate S = Source
Features
z
z z z
1.6 mm (0.062 in.) from Case for 10 s Plastic Body for 10 s Mounting Torque
300 260 1.
IXFP4N100PM Datasheet
