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Advance Technical Information
HiPerFETTM Power MOSFET Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C
IXFP4N100QM
VDSS = 1000V ID25 = 2.2A RDS(on) ≤ 3.0Ω
Maximum Ratings 1000 1000 ±20 ±30 2.2 16 4 700 5 46 - 55 ... +150 150 - 55 ... +150 300 260 1.13 / 10 2.5 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g
OVERMOLDED (IXFP...
IXFP4N100QM Datasheet
