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PTFA220041M - High Power RF LDMOS Field Effect Transistor

Description

The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range.

This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package.

Features

  • Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR =.
  • 44 dBc.
  • Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB.
  • Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB.
  • Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power.
  • In.

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Datasheet Details

Part number PTFA220041M
Manufacturer Infineon
File Size 323.98 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFA220041M Datasheet

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Full PDF Text Transcription

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PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package. PTFA220041M Package PG-SON-10 Gain (dB) Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ = 50 mA, ƒ1 = 1841.
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