PTFA220041M
PTFA220041M is High Power RF LDMOS Field Effect Transistor manufactured by Infineon.
Description
The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package.
PTFA220041M Package PG-SON-10
Gain (d B) Efficiency (%)
Two-tone Drive-up
VDD = 28 V, IDQ = 50 m A, ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz
21 60
Gain 19
50 40
17 33
Efficiency
34 35 36 37 38 Output Power, PEP (d Bm)
20 39
Features
- Typical two-carrier WCDMA performance, 1842 MHz, 8 d B PAR
- POUT = 27 d Bm Avg
- ACPR =
- 44 d Bc
- Typical CW performance, 1842 MHz, 28 V
- POUT = 37 d Bm
- Efficiency = 53.5%
- Gain = 17.9 d B
- Typical CW performance, 940 MHz, 28 V
- POUT = 37.5 d Bm
- Efficiency = 57%
- Gain = 19.7 d B
- Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power
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