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PTFA220081M - High Power RF LDMOS Field Effect Transistor

Description

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz.

This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

Features

  • Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
  • 40 dBc.
  • Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB.
  • Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15 dB.
  • Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power.
  • Integrated ESD protection : Human Body Model, Class 2 (minimum).
  • Excellent thermal stability.
  • P.

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Datasheet Details

Part number PTFA220081M
Manufacturer Infineon
File Size 734.80 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFA220081M Datasheet

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Full PDF Text Transcription

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PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFA220081M Package PG-SON-10 IMD (dBc) Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ = 100 mA, ƒ1 = 939.5 M Hz, ƒ2 = 940.
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