PTFA220081M - High Power RF LDMOS Field Effect Transistor

Infineon

Datasheet Details

Part number	PTFA220081M
Manufacturer	Infineon ↗
File Size	734.80 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFA220081M-Infineon.pdf

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz.

Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
40 dBc.
Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB.
Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15 dB.
Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power.
Integrated ESD protection : Human Body Model, Class 2 (minimum).
Excellent thermal stability.
P.

📁 PTFA220081M Similar Datasheet

PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

Other Datasheets by Infineon

Published: Feb 21, 2016 |