PTFA220081M
PTFA220081M is High Power RF LDMOS Field Effect Transistor manufactured by Infineon.
Description
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.
PTFA220081M Package PG-SON-10
IMD (d Bc) Efficiency (%)
Two-tone Drive-up
VDD = 28 V, IDQ = 100 m A, ƒ1 = 939.5 M Hz, ƒ2 = 940.5 M Hz
-10
-20 Efficiency
50 40
-30 30
IMD 3rd
-40 20
-50
IMD 5th
-60 34
35 36 37 38 39 40
Output Power, PEP (d Bm)
0 41
Features
- Typical two-carrier WCDMA performance, 8 d B PAR
- POUT = 33 d Bm Avg
- ACPR =
- 40 d Bc
- Typical CW performance, 940 MHz, 28 V
- POUT = 40 d Bm
- Efficiency = 59%
- Gain = 20 d B
- Typical CW performance, 2140 MHz, 28 V
- POUT = 40 d Bm
- Efficiency = 50%
- Gain = 15 d B
- Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power
- Integrated ESD protection : Human Body Model, Class 2 (minimum)
- Excellent thermal stability
- Pb-free and Ro HS pliant
RF Characteristics
Two-tone Measurements (not subject to production test
- verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 100 m A, POUT = 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic Gain Drain Efficiency Intermodulation...
