PTFB091802FC Datasheet | Infineon

Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 - 960 MHz Description The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (d B) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1400 m A, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10.0 d B, 3.84 MHz BW Gain 60 40 16 Efficiency 12 20 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 -60ptfb091802fc_g1 30 35 40 45 50 55 Average Output Power (d Bm) Features - Broadband internal input and output matching - Dual path design (2 X 90 W) - Typical CW performance at 960 MHz, 28 V - Ouput power @ P1d B = 206 W - Efficiency = 56% - Gain = 18 d B - Capable of handling...