Part PTFB091802FC
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 352.65 KB
Infineon
PTFB091802FC

Overview

The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flange.

  • Broadband internal input and output matching
  • Dual path design (2 X 90 W)
  • Typical CW performance at 960 MHz, 28 V - Ouput power @ P1dB = 206 W - Efficiency = 56% - Gain = 18 dB
  • Capable of handling 10: