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PTFB091802FC

PTFB091802FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFB091802FC datasheet preview

PTFB091802FC Datasheet

Part number PTFB091802FC
Download PTFB091802FC Datasheet (PDF)
File Size 352.65 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC page 2 PTFB091802FC page 3

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PTFB091802FC Distributor

PTFB091802FC Description

The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band.

PTFB091802FC Key Features

  • 20 -40
  • 60ptfb091802fc_g1 30 35 40 45 50 55
  • Broadband internal input and output matching
  • Dual path design (2 X 90 W)
  • Typical CW performance at 960 MHz, 28 V
  • Ouput power @ P1dB = 206 W
  • Efficiency = 56%
  • Gain = 18 dB
  • Capable of handling 10

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