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PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET

PTFB091802FC Description

PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 * 960 MHz .
The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band.

PTFB091802FC Features

* include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDM

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFB091802FC-like datasheet