PTFB090901FA
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Thermally-enhanced high power rf ldmos fet. The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in t
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PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PT.
PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PT.
PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PT.
PTFB091507FH - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
PTFB091507FH
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz
Description
The PTFB091507FH is an LDMOS FET intended for use in .
PTFB091802FC - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
PTFB091802FC
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz
Description
The PTFB091802FC LDMOS FET is designed for use in pow.
PTFB093608SV - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
PTFB093608SV
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz
Description
The PTFB093608SV is an LDMOS FET intended for use in .
PTFB182503EL - Thermally-Enhanced High Power RF LDMOS FETs
(Infineon Technologies)
PTFB182503EL PTFB182503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-w.
PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs
(Infineon Technologies)
PTFB182503EL PTFB182503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-w.
PTFB183404E - High Power RF LDMOS Field Effect Transistors
(Infineon)
PTFB183404E PTFB183404F
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt.
PTFB183404F - High Power RF LDMOS Field Effect Transistors
(Infineon)
PTFB183404E PTFB183404F
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt.