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PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET

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Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 * 960 MHz .
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz.

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Features

* include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA G

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