Description
The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features
- include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB212507SH Package H-37288G-4/2
IMD (dBc) Drain Efficiency (%)
Single-carrier WCDMA, 3GPP Drive-up
VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-15 -20 IMD Low -25 IMD Up -30 Efficiency
45 40 35 30
-35 25
-40 20
-45 15
-50 10
-55.
PTFB212507SH Datasheet
