• Part: PTFB212507SH
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 189.71 KB
PTFB212507SH Datasheet (PDF) Download
Infineon
PTFB212507SH

Description

The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Key Features

  • Broadband internal matching
  • Wide video bandwidth
  • Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing - A