PTFB212503FL - Thermally-Enhanced High Power RF LDMOS FETs

This page provides the datasheet information for the PTFB212503FL, a member of the PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs family.

Product Overview

Infineon

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Datasheet Details

Part number	PTFB212503FL
Manufacturer	Infineon
File Size	447.99 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFB212503FL Datasheet
Additional preview pages of the PTFB212503FL datasheet.

PTFB212503FL Product details

Description

The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Features

include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB212503FL Package H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -15 -20 ACPR IMD.

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Other Datasheets by Infineon

PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs
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PTFB211501E - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL - Thermally-Enhanced High Power RF LDMOS FETs

Published: Nov 27, 2016 |