PXAC192908FV fet equivalent, thermally-enhanced high power rf ldmos fet.
include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excelle.
in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with.
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced .
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