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FCX1147A - PNP Silicon Power Switching Transistor

Datasheet Summary

Features

  • 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E. g. 25mv Typ. Extremely low equivalent on-resistance. RCE(sat) 53mÙ at 3A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -15 -12 -5 -2.

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Datasheet Details

Part number FCX1147A
Manufacturer Kexin
File Size 48.12 KB
Description PNP Silicon Power Switching Transistor
Datasheet download datasheet FCX1147A Datasheet
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Full PDF Text Transcription

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SMD Type Transistors PNP Silicon Power Switching Transistor FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE(sat) 53mÙ at 3A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -15 -12 -5 -20 -3 -500 1 -55 to +150 Unit V V V A A mA W www.kexin.com.
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