Part MRF7S35120HSR3
Description RF Power Field Effect Transistor
Category Transistor
Manufacturer Motorola Semiconductor
Size 479.34 KB
Motorola Semiconductor
MRF7S35120HSR3

Overview

  • Characterized with Series Equivalent Large - Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.