* Dual MOS FET chips in small package
* 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A) 1.44 RDS(on)2 = 32 mΩ (MAX..

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. 8 Package Drawing (Unit : mm) 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate.

uPA1754

UPA1755

UPA1756

UPA1758

UPA1759

UPA1700A

UPA1701A

UPA1703

UPA1704

UPA1705

UPA1706

UPA1707

UPA1708