BF1206 Datasheet - NXP

Dual N-channel dual-gate MOS-FET

BF1206 Features

* Two low noise gain controlled amplifiers in a single package

* Superior cross-modulation performance during AGC

* High forward transfer admittance

* High forward transfer admittance to input capacitance ratio. APPLICATIONS

* Gain controlled low noise amplifiers for VHF and UHF

BF1206 General Description

The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and .

BF1206 Datasheet (628.30 KB)

BF1206 Datasheet Preview — Preview of BF1206 PDF

Datasheet Details

Part number:

BF1206

Manufacturer:

NXP ↗

File Size:

628.30 KB

Description:

Dual n-channel dual-gate mos-fet.
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semicond.

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BF1206 Dual N-channel dual-gate MOS-FET NXP

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BF1206 Features

BF1206 General Description

Datasheet Details

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Description:

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