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BF1206 - Dual N-channel dual-gate MOS-FET

Description

The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads.

The source and substrate are interconnected.

Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.

Features

  • Two low noise gain controlled amplifiers in a single package.
  • Superior cross-modulation performance during AGC.
  • High forward transfer admittance.
  • High forward transfer admittance to input capacitance ratio.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Dual N-channel dual-gate MOS-FET Product specification BF1206 FEATURES  Two low noise gain controlled amplifiers in a single package  Superior cross-modulation performance during AGC  High forward transfer admittance  High forward transfer admittance to input capacitance ratio. APPLICATIONS  Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners. DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected.
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