BLF4G10LS-120 transistor equivalent, uhf power ldmos transistor.
s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficie.
at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB .
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values. Mode of operation CW GSM EDGE .
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