• Part: BLF4G10LS-120
  • Description: UHF power LDMOS transistor
  • Manufacturer: NXP Semiconductors
  • Size: 140.80 KB
Download BLF4G10LS-120 Datasheet PDF
NXP Semiconductors
BLF4G10LS-120
BLF4G10LS-120 is UHF power LDMOS transistor manufactured by NXP Semiconductors.
.. UHF power LDMOS transistor Rev. 01 - 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values. Mode of operation CW GSM EDGE 2-tone [1] [2] VDS (V) 28 28 28 PL (W) 120 48 (AV) Gp ηD (dB) (%) 19 19 57 40 46 ACPR400 (dBc) - 61 [1] - ACPR600 (dBc) - 72 [2] - EVM (%) 1.5 - IMD3 (dBc) - 31 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to...