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BLF4G20LS-110B Datasheet

UHF power LDMOS transistor

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BLF4G20LS-110B
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB
production test circuit; typical values
Mode of operation
VDS
PL
(V) (W)
Gp ηD ACPR400 ACPR600 EVMrms
(dB) (%) (dBc)
(dBc)
(%)
CW
28 100
13.4 49 -
-
-
GSM EDGE
28 48 (AV) 13.8 38.5 61 [1]
74 [2]
2.1
[1] ACPR400 at 30 kHz resolution bandwidth.
[2] ACPR600 at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 650 mA:
x Load power = 48 W (AV)
x Gain = 13.8 dB (typ)
x Efficiency = 38.5 % (typ)
x ACPR400 = 61 dBc (typ)
x ACPR600 = 74 dBc (typ)
x EVMrms = 2.1 % (typ)
s Easy power control
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use


NXP Semiconductors Electronic Components Datasheet

BLF4G20LS-110B Datasheet

UHF power LDMOS transistor

No Preview Available !

Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
1
3
[1]
2
1
2
3
sym039
Table 3: Ordering information
Type number
Package
Name Description
Version
BLF4G20LS-110B -
earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
-
0.5
-
65
-
Max
65
+15
12
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5:
Symbol
Rth(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
Tcase = 80 °C
PL = 40 W
PL = 100 W
Min Typ Max Unit
- 0.62 0.71 K/W
- 0.52 0.61 K/W
9397 750 14548
Product data sheet
Rev. 01 — 10 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 12


Part Number BLF4G20LS-110B
Description UHF power LDMOS transistor
Maker NXP
Total Page 12 Pages
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