s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x E.

at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 65.

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB production test circuit;.

BLF4G10-120

BLF4G10LS-120

BLF4G10S-120

BLF404

BLF0810-180

BLF0810-90

BLF0810S-180

BLF0810S-90

BLF082

BLF0910H6L500

BLF0910H6LS500

BLF0910H9LS600

BLF1043