s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x E.
at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 65.
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB production test circuit;.
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