* −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V
* Low Gate Charge (7.2 nC Typical)
* High Performance Trench Technology for Ext.

Features
* −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V
* Low Gate Charge (7.2 .

This P−Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features
* −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V
* Lo.

FDC6301N

FDC6302P

FDC6303N

FDC6304P

FDC6305N

FDC6306P

FDC6308P

FDC6310P

FDC6312P

FDC6318P

FDC6320C

FDC6321C

FDC6322C