Datasheet4U Logo Datasheet4U.com

FDC634P - P-Channel MOSFET

Description

This P

voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Features

  • 3.5 A,.
  • 20 V RDS(ON) = 80 mW @ VGS =.
  • 4.5 V RDS(ON) = 110 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge (7.2 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).

📥 Download Datasheet

Datasheet preview – FDC634P

Datasheet Details

Part number FDC634P
Manufacturer ON Semiconductor
File Size 340.25 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC634P Datasheet
Additional preview pages of the FDC634P datasheet.

📁 Similar Datasheet

  • FDC634P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDC6301N - Dual N-Channel / Digital FET (Fairchild Semiconductor)
  • FDC6302P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
  • FDC6303N - Dual N-Channel Digital FET (Fairchild Semiconductor)
  • FDC6303N - Dual N-Channel Digital FET (onsemi)
  • FDC6304P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
  • FDC6305N - Dual N-Channel MOSFET (Fairchild Semiconductor)
  • FDC6306P - Dual P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
  • FDC6306P - Dual P-Channel 20V MOSFET (VBsemi)
  • FDC6306P - P-Channel MOSFET (onsemi)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – P-Channel 2.5 V Specified POWERTRENCH) FDC634P General Description This P−Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V • Low Gate Charge (7.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous (Note 1a) −3.5 A − Pulsed −20 A PD Maximum Power (Note 1a) Dissipation (Note 1b) 1.6 W 0.
Published: |