FDC634P
Overview
This P-Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications.
- -3.5 A, -20 V RDS(ON) = 80 mW @ VGS = -4.5 V RDS(ON) = 110 mW @ VGS = -2.5 V
- Low Gate Charge (7.2 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
