FDC658AP
Description
This P- Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process. It has been optimized for battery power management applications.
Features
- Max RDS(on) = 50 m W @ VGS =
- 10 V, ID =
- 4 A
- Max RDS(on) = 75 m W @ VGS =
- 4.5 V, ID =
- 3.4 A
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- Pb- Free, Halide Free and Ro HS pliant
Applications
- Battery Management
- Load Switch
- Battery Protection
- DC- DC Conversion
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Symbol
Parameter
Ratings Unit
VDS Drain- Source Voltage
VGS Gate- Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
- 30
±25
- 4
- 20
Maximum Power dissipation (Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature...
