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AM81719-040 - RF & MICROWAVE TRANSISTORS

Description

The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.

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Datasheet Details

Part number AM81719-040
Manufacturer STMicroelectronics
File Size 44.72 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet AM81719-040 Datasheet
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Full PDF Text Transcription

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AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . . . PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE AM81719-040 BRANDING 81719-40 PIN CONNECTION DESCRIPTION The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wirebonding is employed to ensure long-term reliability and product consistency. 1. Collector 2. Base 3. Emitter 4.
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