. . . . . . PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOM.

The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized auto.

AM81719-030

AM81720-012

AM8105

AM81214-006

AM81214-015

AM81214-030

AM81214-060

AM8150

AM8152A

AM8152B

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