STPSC6C065-Y Overview
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC6C065-Y Key Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Dedicated to PFC