STPSC6C065-Y diode equivalent, automotive 650v power schottky silicon carbide diode.
* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of
temperature
* Dedicated to PFC applications
* High forwar.
* High forward surge capability
* PPAP capable
* ECOPACK®2 compliant component
Datasheet - production data
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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no.
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