Description
The TC58NVG4D2 is a single 3.3 V 16 Gbit (17,968,398,336 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 2084 blocks.
Features
- Organization Memory cell array Register Page size Block size.
- TC58NVG4D2E 8568 × 260.5K × 8 8568 × 8 8568 bytes (1M + 47 K) bytes
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Mullti Page Read Mode control Serial input/output Command control Number of valid blocks Min 1968 blocks Max 2084 blocks Power supply VCC = 2.7 V to 3.6 V VCCQ = 2.7 V to 3.6 V Access time Cell array to register Se.
TC58NVG4D2ETA00 Datasheet
