TPCP8512 - Silicon NPN Transistor

Product Overview

Toshiba

Part number	TPCP8512
Manufacturer	Toshiba
File Size	342.18 KB
Description	Silicon NPN Transistor
Datasheet	TPCP8512 Datasheet
Additional preview pages of the TPCP8512 datasheet.

(1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ. ) (IC = 1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8512 4. Absolut.

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Published: Jan 30, 2024 |