TPCP8512 transistor equivalent, silicon npn transistor.
(1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) Hig.
* High-Speed Switching
* DC-DC Converters
2. Features
(1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC.
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