This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerC
Key Features
18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
Ultra-low Gate charge(Typical 42nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃)
WFP18N50
Silicon N-Channel MOSFET
General.
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Features � 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Rang...
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Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP18N50 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .