WFP18N50 mosfet equivalent, silicon n-channel mosfet.
� 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
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This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuite.
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