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WFP18N50 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerC

Key Features

  • 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 42nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFP18N50 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFP18N50
Manufacturer Winsemi
File Size 615.55 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP18N50 Datasheet

Full PDF Text Transcription for WFP18N50 (Reference)

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Features � 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Rang...

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Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP18N50 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .