GTVA355001EC Datasheet

Features and Benefits

• GaN on SiC HEMT technology
• Broadband internal input and output matching
• Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB
• Pb-free and RoHS compliant GTVA355001FC Package H-37248.