Datasheet4U Logo Datasheet4U.com

IRF840I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

IRF840I Description

IRF840I RoHS-compliant Product Advanced Power Electronics Corp.▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N.
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable The TO-220CFM isolation packag.

IRF840I Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 ±20 8 5.1 32 35 2 Units V

📥 Download Datasheet

Preview of IRF840I PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRF840I
Manufacturer
Advanced Power Electronics
File Size
271.26 KB
Datasheet
IRF840I-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

📁 Related Datasheet

  • IRF840 - N-Channel Power MOSFET (STMicroelectronics)
  • IRF840A - Power MOSFET (Vishay)
  • IRF840AL - Power MOSFET (International Rectifier)
  • IRF840AS - Power MOSFET (International Rectifier)
  • IRF840B - 500V N-Channel MOSFET (Fairchild Semiconductor)
  • IRF840FI - N-CHANNEL POWER MOS TRANSISTORS (STMicroelectronics)
  • IRF840HPBF - Power MOSFET (Vishay)
  • IRF840L - Power MOSFET (Vishay)

📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics IRF840I-like datasheet