AFN1123WS Datasheet - Alfa-MOS

AFN1123WS 100V N-Channel Enhancement Mode MOSFET

AFN1123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN1123WS Features

* 100V/3.6A,RDS(ON)=125mΩ@VGS=10V

* 100V/2.8A,RDS(ON)=150mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-323 package design Application

* Drivers: Relays, Solenoids, Lamps, Hammers, D

AFN1123WS Datasheet (796.80 KB)

AFN1123WS Datasheet Preview — Preview of AFN1123WS PDF

Datasheet Details

Part number:

AFN1123WS

Manufacturer:

Alfa-MOS

File Size:

796.80 KB

Description:

100v n-channel enhancement mode mosfet.

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AFN1123WS 100V N-Channel Enhancement Mode MOSFET Alfa-MOS

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