AFN1123WS, AFN1123WS-Alfa Datasheet - Alfa-MOS

AFN1123WS 100V N-Channel Enhancement Mode MOSFET

AFN1123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN1123WS Features

* 100V/3.6A,RDS(ON)=125mΩ@VGS=10V

* 100V/2.8A,RDS(ON)=150mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-323 package design Application

* Drivers: Relays, Solenoids, Lamps, Hammers, D

AFN1123WS-Alfa-MOS.pdf

AFN1123WS Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN1123WS, AFN1123WS-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN1123WS, AFN1123WS-Alfa

Manufacturer:

Alfa-MOS

File Size:

796.80 KB

Description:

100v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN1123WS, AFN1123WS-Alfa.
Please refer to the document for exact specifications by model.

AFN1123WS Distributor

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TAGS

AFN1123WS AFN1123WS-Alfa 100V N-Channel Enhancement Mode MOSFET Alfa-MOS