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AFN1123WS, AFN1123WS-Alfa 100V N-Channel Enhancement Mode MOSFET

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Description

Alfa-MOS Technology General .
AFN1123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN1123WS, AFN1123WS-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN1123WS, AFN1123WS-Alfa
Manufacturer
Alfa-MOS
File Size
796.80 KB
Datasheet
AFN1123WS-Alfa-MOS.pdf
Description
100V N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN1123WS, AFN1123WS-Alfa.
Please refer to the document for exact specifications by model.

Features

* 100V/3.6A,RDS(ON)=125mΩ@VGS=10V
* 100V/2.8A,RDS(ON)=150mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

AFN1123WS Distributors

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