AFN7298AS, AFN7298AS-Alfa Datasheet - Alfa-MOS

AFN7298AS 200V Dual N-Channel Enhancement Mode MOSFET

AFN7298AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin De.

AFN7298AS Features

* ID=7A,RDS(ON)=115mΩ@VGS=10V

* ID=7A,RDS(ON)=125mΩ@VGS=7.5V

* Super high density cell design for extreSuper high density cell design for extremely low RDS (ON)

* DFN 5X6-8L package design Application

* Motor and Load Control

* Power Management in White LED System

* LCD

AFN7298AS-Alfa-MOS.pdf

AFN7298AS Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN7298AS, AFN7298AS-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN7298AS, AFN7298AS-Alfa

Manufacturer:

Alfa-MOS

File Size:

719.19 KB

Description:

200v dual n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN7298AS, AFN7298AS-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN7298AS AFN7298AS-Alfa 200V Dual N-Channel Enhancement Mode MOSFET Alfa-MOS

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