Datasheet Details
- Part number
- AO4900A
- Manufacturer
- Alpha & Omega Semiconductors
- File Size
- 141.36 KB
- Datasheet
- AO4900A_AlphaOmegaSemiconductors.pdf
- Description
- Dual N-Channel Enhancement Mode Field Effect Transistor
AO4900A Description
AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
AO4900A Features
* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 K
D1
SOIC-8
A
G1 S1
Absolute Maximum Ratings T A=25°C unless otherwise noted
AO4900A Applications
* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,
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