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AO4912 - Dual N-Channel Enhancement Mode Field Effect Transistor

AO4912 Description

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

AO4912 Features

* Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ Q2 VDS(V) = 30V ID=7A (VGS = 10V)

AO4912 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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Datasheet Details

Part number
AO4912
Manufacturer
Alpha & Omega Semiconductors
File Size
175.56 KB
Datasheet
AO4912_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

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📌 All Tags

Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO4912-like datasheet

AO4912 Stock/Price