Description
BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev.6 * 7 November 2016 Product data sheet 1.Product profile 1.1 General .
250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (869 MHz to 960 MHz)
* Lower output capacitance for impro
Applications
* at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz. Typical RF performance at Tcase = 25 C. Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
