Datasheet4U Logo Datasheet4U.com

BLF7G10LS-250, BLF7G10L-250 Power LDMOS transistor

BLF7G10LS-250 Description

BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev.6 * 7 November 2016 Product data sheet 1.Product profile 1.1 General .
250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz.

BLF7G10LS-250 Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (869 MHz to 960 MHz)
* Lower output capacitance for impro

BLF7G10LS-250 Applications

* at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz. Typical RF performance at Tcase = 25 C. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W)

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BLF7G10LS-250, BLF7G10L-250. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
BLF7G10LS-250, BLF7G10L-250
Manufacturer
Ampleon
File Size
403.59 KB
Datasheet
BLF7G10L-250-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF7G10LS-250, BLF7G10L-250.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags

Power LDMOS transistor Ampleon
Ampleon BLF7G10LS-250-like datasheet