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BLF7G24L-100 Power LDMOS transistor

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Description

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

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Datasheet Specifications

Part number
BLF7G24L-100
Manufacturer
Ampleon
File Size
421.45 KB
Datasheet
BLF7G24L-100-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* D

Applications

* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20

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