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BLF7G24LS-160P, BLF7G24L-160P Power LDMOS transistor

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Description

BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev.6 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descriptio.
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

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This datasheet PDF includes multiple part numbers: BLF7G24LS-160P, BLF7G24L-160P. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLF7G24LS-160P, BLF7G24L-160P
Manufacturer
Ampleon
File Size
410.25 KB
Datasheet
BLF7G24L-160P-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF7G24LS-160P, BLF7G24L-160P.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (2300 MHz to 2400 MHz)

Applications

* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k (MHz) (mA) (V) (W) (dB) (%) (dBc) IS-95 2300 to 2400 1200 28 30 18.5 27.5 4

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