NESG270034

NPN SiGe RF TRANSISTOR

CEL

NESG270034 Features

* This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz

* Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V

* 3

NESG270034 General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

NESG270034 Datasheet (265.63 KB)

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NESG270034

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CEL

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265.63 KB

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Npn sige rf transistor.
www.DataSheet4U.com NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MI.

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NESG270034 NPN SiGe TRANSISTOR CEL

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NESG270034 Features

NESG270034 General Description

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