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MTP2311V8 P-Channel Enhancement Mode MOSFET

MTP2311V8 Description

CYStech Electronics Corp.P-Channel Enhancement Mode MOSFET Spec.No.: C733V8 Issued Date : 2013.06.24 Revised Date : Page No.: 1/9 MTP2311V8 Desc.
BVDSS ID RDSON@VGS=10V, ID=-3A RDSON@VGS=-4.

MTP2311V8 Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package Equivalent Circuit MTP2311V8 Outline DFN3×3 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTP2311V8-0-T1-G Package DFN3×3 (Pb-free lea

MTP2311V8 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2311V8 CYStek Product Specification

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Datasheet Details

Part number
MTP2311V8
Manufacturer
CYStech Electronics
File Size
371.56 KB
Datasheet
MTP2311V8-CYStechElectronics.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET CYStech Electronics
CYStech Electronics MTP2311V8-like datasheet