CY7C1414V18, CY7C1412V18 - (CY7C14xxV18) SRAM 2-Word Burst Architecture

Cypress Semiconductor

Datasheet Details

Part number	CY7C1414V18, CY7C1412V18
Manufacturer	Cypress Semiconductor
File Size	459.26 KB
Description	(CY7C14xxV18) SRAM 2-Word Burst Architecture
Datasheet	CY7C1412V18_CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1414V18, CY7C1412V18. Please refer to the document for exact specifications by model.

The CY7C1410V18, CY7C1425V18, CY7C1412V18, and CY7C1414V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture.

Separate Independent Read and Write data ports.
Supports concurrent transactions.
200-MHz clock for high bandwidth.
2-Word Burst on all accesses.
Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 400 MHz) @ 200 MHz www. DataSheet4U. com.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two output clocks (C and C) accounts for clock skew and flight time mismatchi.

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Published: Jul 23, 2008 |