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MTB015N10QQ8 N-Channel Enhancement Mode MOSFET

MTB015N10QQ8 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB015N10QQ8 Spec.No.: C141Q8 Issued Date : 2015.10.13 Revised Date : Page No.: .

MTB015N10QQ8 Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 12.2A 12.6

MTB015N10QQ8 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB015N10QQ8 CYStek Product Specification

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Datasheet Details

Part number
MTB015N10QQ8
Manufacturer
Cystech Electonics
File Size
456.98 KB
Datasheet
MTB015N10QQ8-CystechElectonics.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET Cystech Electonics
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