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MTB1D5N03H8 - N-Channel Enhancement Mode Power MOSFET

MTB1D5N03H8 Description

CYStech Electronics Corp.Spec.No.: C984H8 Issued Date : 2017.01.06 Revised Date : Page No.: 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB1D.

MTB1D5N03H8 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.5A 1.3mΩ(typ) 1.6m

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Datasheet Details

Part number
MTB1D5N03H8
Manufacturer
Cystech Electonics
File Size
549.80 KB
Datasheet
MTB1D5N03H8-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB1D5N03H8-like datasheet