MTB50N10E3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

MTB50N10E3 Description

CYStech Electronics Corp.Spec.No.: C893E3 Issued Date : 2016.06.01 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTB50N10.

MTB50N10E3 Features

* Low Gate Charge
* Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ)

MTB50N10E3 Applications

* or systems.
* CYStek assumes no liability for any consequence of custom

📥 Download Datasheet

MTB50N10E3 Datasheet Preview — Preview of MTB50N10E3 PDF

Datasheet Details

Part number: MTB50N10E3
Manufacturer: Cystech Electonics
File Size: 337.69 KB
Datasheet: MTB50N10E3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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